wcm20 64 n - an d p - channel complementary, 20v, mosfet description s the wcm20 64 - channel p - channel enhancement mos field effect transistor as a single package for dc - dc converter or level shift application s , uses advanced trench technology and design to provide excellent r ds(on) w ith low gate charge. standard product wcm2 0 64 is pb - features ? trench technology ? supper high density cell design ? e xcellent on resistance ? extremely low threshold voltage ? small package sot - 23 - 6l applications ? driver: relays, solenoids, lamps, hammers ? power supply converters circuit ? load/pow er switching for po r table device sot - 23 - 6l pin configuration (top view) 2064 = device code yyww = date code marking order information device package shipping wcm20 64 - 6/tr sot - 23 - 6l 300 0 /tape&reel v ds (v) typical r ds(on) ( ) n - channel 20 0.034@ v gs =4.5v 0.041@ v gs =2.5v 0.050@ v gs =1.8v p - channel - 20 0.083 @ v gs = - 4.5v 0.110 @ v gs = - 2.5v 0.145 @ v gs = - 1.8v - free. n d h a l o g e n f r e e a n d a i s t h e n 1 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1 2 3 6 5 4 g 1 s 2 g 2 d 2 s 1 d 1 2 0 6 4 y y w w 1 2 3 6 5 4
absolute maximum ratings (t a =25 o c unless otherwise noted) thermal resistance ratings (t a =25 o c unless otherwise noted) a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c pulse width<380s, duty cycle<2% d maximum junction temperature t j =150 c . symbol parameter n - channel p - channel unit v dss drain - to - source voltage 20 - 20 v v gss gate - to - source voltage 8 8 v i d continuous drain current a d t a =25 o c 4.4 - 2. 8 a t a = 7 0 o c 3 .5 - 2. 2 i dm pulsed drain current c 16 - 10 a p d power dissipation a d t a =25 o c 0.72 w t a =70 o c 0.46 t j operation junction temperature - 55~150 c t stg storage temperature range - 55~150 c parameter symbol typical maximum unit junction - to - ambient thermal resistance a t 10 s r ja 74 92 c/w steady state 115 143 junction - to - ambient thermal resistance b t 10 s r ja 90 112 steady state 138 172 junction - to - case thermal resistance steady state r jc 63 78 wcm20 64 2 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (t a =25 o c unless otherwise noted) symbol parameter test cond ition min typ. max unit off characteristics v( b r ) dss drain - source breakdown voltage v gs =0v, i d =250ua n - ch 20 v v gs =0v, i d = - 250ua p - ch - 20 i dss zero gate voltage drain current v ds = 16 v, v gs =0v n - ch 1 ua v ds = - 16 v, v gs =0v p - ch - 1 i gss gate C source leakage current v ds =0v, v gs = 8 v n - ch 1 u a p - ch 1 on characteristics v gs(th) gate threshold voltage v ds = v gs , i d =250ua n - ch 0.6 5 1. 0 v v ds = v gs , i d = - 250ua p - ch - 0. 7 0 - 1. 0 r ds(on) drain - source on - resistance v gs =4.5v, i d = 3.4 a n - ch 34 4 6 m ? v gs = - 4.5v, i d = - 2.8 a p - ch 83 11 6 v gs =2.5v, i d = 3.0 a n - ch 41 6 9 v gs = - 2.5v, i d = - 2.0 a p - ch 110 0 dynamic characteristics ciss input capacitance nmos v ds =10v, v gs =0v, f=1mhz pmos v ds = - 10 v,v gs =0v, f=1mh z n - ch 529 pf p - ch 531 coss output capacitance n - ch 62 p - ch 61 crss reverse transfer capacitance n - ch 57 p - ch 54 q g(tot) total gate charge nmos v d d =10v, v gs =4.5v, i d = 3.4 a pmos v d d = - 10v,v gs = - 4.5 v i d = - 2.8 a n - ch 7.35 nc p - ch 8.1 q g(t h ) threshold gate charge n - ch 0. 75 p - ch 0.82 q gs gate - source charge n - ch 1. 6 p - ch 1. 8 q gd gate - drain charge n - ch 1.35 p - ch 1.1 td(on) turn - on delay time n m os v dd =10v, v gs =4.5v, i d = 1 .0 a, r g =6 ? pmos v d d = - 10v, i d = - 1.2a, v gs = - 4.5v, r g =6 ? n - ch 18.6 ns p - ch 21.6 tr turn - on rise time n - ch 8.2 p - ch 8.6 td(off) turn - off delay time n - ch 55 p - ch 58 tf turn - off fall time n - ch 7.6 p - ch 8.4 1 6 body diode characteristics forward voltage v sd v gs = 0 v, i s = 1.0 a n - ch 0.7 1. 5 v v gs = 0 v, i s = - 1.0 a p - ch - 0.8 - 1.5 wcm20 64 3 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
1 2 3 4 0.03 0.04 0.05 0.06 0.07 0.08 v gs =1.8v v gs =2.5v r ds(on) - on-resistance() i ds -drain-to-source current(a) v gs =4.5v -50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 normalized gate threshold voltage temperature ( o c) i d =250ua -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 normalized on-resistance temperature( ? c) v gs =4.5v i d =3.4a 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 12 14 16 i ds -drain to source current (a) v ds -drain to source voltage(v) v gs =1.8v v gs =2.5v v gs =3.0v v gs =3.5v v gs =4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 120 140 r ds(on) - on-resistance(m) v gs -gate to source voltage(v) i d =3.4a 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 v ds =5v t=125 ? c t=25 ? c t=-50 ? c i ds -drain to source current(a) v gs -gate to source voltage(v) typical characteristics n - channel output characteristics on - resistance vs. drain current on - resistance vs. junction temperature t a = 25 c, unless otherwise noted ) transfer characteristics on - resistance vs. gate - to - source voltage threshold voltage vs. temperatu re wcm20 64 4 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1 2 3 4 0.03 0.04 0.05 0.06 0.07 0.08 v gs =1.8v v gs =2.5v r ds(on) - on-resistance() i ds -drain-to-source current(a) v gs =4.5v -50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 normalized gate threshold voltage temperature ( o c) i d =250ua -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 normalized on-resistance temperature( q c) v gs =4.5v i d =3.4a 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 12 14 16 i ds -drain to source current (a) v ds -drain to source voltage(v) v gs =1.8v v gs =2.5v v gs =3.0v v gs =3.5v v gs =4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 120 140 r ds(on) - on-resistance(m) v gs -gate to source voltage(v) i d =3.4a 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 v ds =5v t=125 q c t=25 q c t=-50 q c i ds -drain to source current(a) v gs -gate to source voltage(v)
1e-4 1e-3 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 power (w) pulse width (s) t j(max) =150c t a =25c 0 2 4 6 8 10 0 200 400 600 800 1000 ciss coss crss v gs =0v f=1mhz c - capacitance(pf) v ds - drain-to-source voltage (v) 0.1 1 10 100 0.01 0.1 1 10 100 100us 1ms 10ms 100ms 1s 10s dc limit by rdson bvdss limit i d - drain current (a) v ds - drain source voltage (v) * v gs > minimum v gs at which r ds(on) is specified t a =25 ? c single pulse 0.0 0.3 0.6 0.9 1.2 1.5 2 4 6 8 10 12 14 16 i sd -source to drain current (a) v sd - source to drain voltage (v) t=25 ? c t=125 ? c 0 2 4 6 8 10 0 1 2 3 4 5 v gs -gate voltage (v) qg(nc) v gs =4.5v i d =4.0a capacitance body diode forward voltage single pulse power safe operating power gate charge characteristics wcm20 64 5 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1e-4 1e-3 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 power (w) pulse width (s) t j(max) =150c t a =25c 0 2 4 6 8 10 0 200 400 600 800 1000 ciss coss crss v gs =0v f=1mhz c - capacitance(pf) v ds - drain-to-source voltage (v) 0.1 1 10 100 0.01 0.1 1 10 100 100us 1ms 10ms 100ms 1s 10s dc limit by rdson bvdss limit i d - drain current (a) v ds - drain source voltage (v) * v gs > minimum v gs at which r ds(on) is specified t a =25 q c single pulse 0.0 0.3 0.6 0.9 1.2 1.5 2 4 6 8 10 12 14 16 i sd -source to drain current (a) v sd - source to drain voltage (v) t=25 q c t=125 q c 0 2 4 6 8 10 0 1 2 3 4 5 v gs -gate voltage (v) qg(nc) v gs =4.5v i d =4.0a -50 0 50 100 150 35 40 45 50 55 60 v gs =4.5v,i d =3.5a r ds(on) -d to s on-resistance temperature( o c)
1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-4 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 normalized effective transient thermal impedance square wave pulse duration (sec) single pulse transient thermal response (junction - to - ambient) p dm t 1 t 2 1. duty cycle, d=t 1 /t 2 2. per unit base = r ja = 115 c/w 3. t jm - t a = p dm r ja 4. surface mounted wcm20 64 6 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-4 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 normalized effective transient thermal impedance square wave pulse duration (sec) single pulse
-50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 normalized on-resistance temperature ( o c) v gs =-4.5v i d =-2.8a -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized gate threshold voltage temperature ( o c) i d =-250ua 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 6 7 8 9 10 -i ds -drain to source current (a) -v ds -drain to source voltage(v) v gs =-1.8v v gs =-2.5v v gs =-3.0v v gs =-3.5v v gs =-4.5v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 50 100 150 200 250 300 r ds(on) - on-resistance(m) -v gs -gate to source voltage(v) i d =-2.8a 0 1 2 3 4 5 0 50 100 150 200 250 300 r ds(on) - on-resistance(m) -i ds -drain-to-source current(a) v gs =-1.8v v gs =-2.5v v gs =-4.5v 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 v ds =-5v -i ds -drain to source current(a) -v gs -gate to source voltage(v) t=-50 ? c t=25 ? c t=125 ? c typical characteristics p - channel output characteristics on - resistance vs. drain current on - resistance vs. junction temperature t a = 25 c, unl ess otherwise noted transfer characteristics on - resistance vs. gate - to - source voltage threshold voltage vs. temperature wcm20 64 7 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 normalized on-resistance temperature ( o c) v gs =-4.5v i d =-2.8a -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized gate threshold voltage temperature ( o c) i d =-250ua 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 6 7 8 9 10 -i ds -drain to source current (a) -v ds -drain to source voltage(v) v gs =-1.8v v gs =-2.5v v gs =-3.0v v gs =-3.5v v gs =-4.5v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 50 100 150 200 250 300 r ds(on) - on-resistance(m) -v gs -gate to source voltage(v) i d =-2.8a 0 1 2 3 4 5 0 50 100 150 200 250 300 r ds(on) - on-resistance(m) -i ds -drain-to-source current(a) v gs =-1.8v v gs =-2.5v v gs =-4.5v 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 v ds =-5v -i ds -drain to source current(a) -v gs -gate to source voltage(v) t=-50 q c t=25 q c t=125 q c
0.1 1 10 100 0.01 0.1 1 10 100 100us 1ms 10ms 100ms 1s 10s dc limit by rdson* bvdss limit -i d - drain current (a) -v ds - drain source voltage (v) * v gs > minimum v gs at which r ds(on) is specified t a =25 ? c single pulse 1e-4 1e-3 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 power (w) pulse width (s) t j(max) =150c t a =25c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 -i sd -source to drain current (a) -v sd - source to drain voltage (v) t=25 ? c t=125 ? c 0 2 4 6 8 10 0 1 2 3 4 5 -v gs -gate voltage (v) qg(nc) v gs =-4.5v i d =-2.8v capacitor body diode forward voltage single pulse power (junction - to - ambient) safe operating power gate charge characteristics 0 2 4 6 8 10 0 100 200 300 400 500 600 700 800 crss coss ciss c-capacitance(pf) -v ds -drain to source voltage(v) wcm20 64 8 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0.1 1 10 100 0.01 0.1 1 10 100 100us 1ms 10ms 100ms 1s 10s dc limit by rdson* bvdss limit -i d - drain current (a) -v ds - drain source voltage (v) * v gs > minimum v gs at which r ds(on) is specified t a =25 q c single pulse 1e-4 1e-3 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 power (w) pulse width (s) t j(max) =150c t a =25c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 -i sd -source to drain current (a) -v sd - source to drain voltage (v) t=25 q c t=125 q c 0 2 4 6 8 10 0 1 2 3 4 5 -v gs -gate voltage (v) qg(nc) v gs =-4.5v i d =-2.8v 0 2 4 6 8 10 0 100 200 300 400 500 600 700 800 crss coss ciss c-capacitance(pf) -v ds -drain to source voltage(v)
1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-4 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 normalized effective transient thermal impedance square wave pulse duration (sec) single pulse transient thermal response (junction - to - ambient) p dm t 1 t 2 1. duty cycle, d=t 1 /t 2 2. per unit base = r ja = 115 c/w 3. t jm - t a = p dm r ja 4. surface mounted wcm20 64 9 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-4 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 normalized effective transient thermal impedance square wave pulse duration (sec) single pulse
package outline dimension sot - 23 - 6l min max min max a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e 1.500 1.700 0.059 0.067 e1 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 0 8 0 8 symbol dimensions in millimeter s dimensions in inches 0.950(bsc) 0.037(bsc) wcm20 64 10 of 10 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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